1 transistor 2sc2405, 2sC2406 silicon npn epitaxial planer type for low-frequency and low-noise amplification complementary to 2sa1034 and 2sa1035 n features l low noise voltage nv. l high foward current transfer ratio h fe . l mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 35 55 35 55 5 100 50 200 150 C55 ~ +150 unit v v v ma ma mw ?c ?c 2sc2405 2sC2406 2sc2405 2sC2406 n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter voltage transition frequency noise voltage symbol i cbo i ceo v cbo v ceo v ebo h fe * v ce(sat) v be f t nv conditions v cb = 10v, i e = 0 v ce = 10v, i b = 0 i c = 10 m a, i e = 0 i c = 2ma, i b = 0 i e = 10 m a, i c = 0 v cb = 5v, i e = C2ma i c = 100ma, i b = 10ma v ce = 1v, i c = 100ma v cb = 5v, i e = C2ma, f = 200mhz v ce = 10v, i c = 1ma, g v = 80db r g = 100k w , function = flat min 35 55 35 55 5 180 typ 0.7 200 110 max 100 1 700 0.6 1 unit na m a v v v v v mhz mv * h fe rank classification rank r s t h fe 180 ~ 360 260 ~ 520 360 ~ 700 2sc2405 sr ss st 2sC2406 tr ts tt marking symbol : s (2sc2405) t (2sC2406) unit: mm 1:base jedec:toC236 2:emitter eiaj:scC59 3:collector mini type package 2.8 +0.2 ?.3 1.5 +0.25 ?.05 0.65 0.15 0.65 0.15 3 1 2 0.95 0.95 1.9 0.2 0.4 +0.1 ?.05 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.1 0.16 +0.1 ?.06 1.45 0.1 to 0.3 2.9 +0.2 ?.05 marking symbol 2sc2405 2sC2406 2sc2405 2sC2406 free datasheet http://www..net/
2 transistor 2sc2405, 2sC2406 p c ta i c v ce i c i b i c v be v ce(sat) i c h fe i c f t i e c ob v cb nv v ce 0 160 40 120 80 140 20 100 60 0 250 200 150 100 50 225 175 125 75 25 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 160 120 40 100 140 80 02 60 ta=25?c i b =350 m a 300 m a 250 m a 200 m a 150 m a 100 m a 50 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 00.5 0.4 0.1 0.3 0.2 0 160 120 40 100 140 80 20 60 v ce =5v ta=25?c base current i b ( ma ) collector current i c ( ma ) base to emitter voltage v be ( v ) collector current i c ( ma ) 02.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce =5v ta=75?c ?5?c 25?c 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 0 1000 800 600 400 200 900 700 500 300 100 v ce =5v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 500 400 300 200 100 450 350 250 150 50 v cb =5v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 0.1 1 10 100 0.3 3 30 0 10 8 6 4 2 9 7 5 3 1 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 3 10 30 100 0 160 120 40 100 140 80 20 60 i c =1ma g v =80db function=flat 4.7k w r g =100k w 22k w collector to emitter voltage v ce ( v ) noise voltage nv ( mv ) free datasheet http://www..net/
3 transistor 2sc2405, 2sC2406 nv v ce nv i c nv i c nv r g nv r g 1 3 10 30 100 0 300 240 120 180 60 i c =1ma g v =80db function=riaa 4.7k w r g =100k w 22k w collector to emitter voltage v ce ( v ) noise voltage nv ( mv ) 0.01 0.03 0.1 0.3 1 0 160 120 40 100 140 80 20 60 v ce =10v g v =80db function=flat 4.7k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv ) 0.01 0.03 0.1 0.3 1 0 300 240 120 180 60 v ce =10v g v =80db function=riaa 4.7k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv ) 1 3 10 30 100 0 160 120 40 100 140 80 20 60 v ce =10v g v =80db function=flat 0.1ma i c =1ma 0.5ma signal source resistance r g ( k w ) noise voltage nv ( mv ) 1 3 10 30 100 0 300 240 120 180 60 v ce =10v g v =80db function=riaa 0.1ma i c =1ma 0.5ma signal source resistance r g ( k w ) noise voltage nv ( mv ) free datasheet http://www..net/
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